Level spectrum versus single level in surface recombinationLANDSBERG, P. T; BROWNE, D. C.Photovoltaic specialists conference. 19. 1987, pp 813-817Conference Paper

Sensor and micromachined optical device technologies (24-26 May 2011, Beijing China)Wang, Yuelin; Xie, Huikai; Jin, Yufeng et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 1 vol, isbn 978-0-8194-8832-9Conference Proceedings

Analysis for the Stick-slip Motion of Differential Power Screw ActuatorZHANG, Jun-Bo; YAO PING; ZHANG, Xue-Jun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911J.1-81911J.9Conference Paper

Propriétés photoélectriques des structures métal-diélectrique-semiconducteur avec couche de diélectrique transparente par effet tunnel (revue)VUL, A. YA; SACHENKO, A. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1361-1376, issn 0015-3222Article

One dimensional photoconductivity in DNAMAGAN, J. D; BLAU, W; CROKE, D. T et al.Chemical physics letters. 1987, Vol 141, Num 6, pp 489-492, issn 0009-2614Article

Low surface recombination velocities on doped silicon and their implications for point contact solar cellsKING, R. R; SINTON, R. A; SWANSON, R. M et al.Photovoltaic specialists conference. 19. 1987, pp 1168-1173Conference Paper

Study of Dynamic Weighing System Based on Photoelectric Detecting TechniqueSONG, Gui-Cai; NA, Yan-Xiang; CAO, Shi-Hao et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819112.1-819112.7Conference Paper

Bright Fluorescence from Individual Single-Walled Carbon NanotubesLEE, Andrea J; XIAOYONG WANG; CARLSON, Lisa J et al.Nano letters (Print). 2011, Vol 11, Num 4, pp 1636-1640, issn 1530-6984, 5 p.Article

Study on Effect of Polarization for Improving Signal Noise Ratio of Stellar Objects in DaytimeRUI-JIN, Zhang; XIAN HAO; WEI KAI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911M.1-81911M.6Conference Paper

Measurement of minority carrier lifetime by pulsed photoabsorption decayLANDIS, G. A; STODDARD, H.Photovoltaic specialists conference. 19. 1987, pp 761-763Conference Paper

Dember-Effekt und Photon-Drag in anisotropen Halbleitern = Effet Dember et entraînement par photons dans des semiconducteurs anisotropes = Dember effect and photon drag in anisotropic semiconductorsGENZON, D.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1984, Vol 33, Num 2, pp 15-19, issn 0043-6925Article

Constant Fraction Discriminator for Fast, High Precision Pulsed TOF Laser RangefinderCHEN, Jian-Yong; SHEN, Dong-Qing; LI, Wan-Cai et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911F.1-81911F.6Conference Paper

Fabrication of Ultra-thin Silicon PIN DetectorMIN YU; XIANSHAN DONG; YING LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819103.1-809103.4Conference Paper

Study of the Bullet Position Measuring Model With Six Light ScreensFENG BIN; SHI, Xiu-Hua; KANG, Zhi-Qiang et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819108.1-819108.7Conference Paper

A study of bacteriorhodopsin-containing proteoliposome incorporation into bimolecular lipid membranesMIRSKY, V. M; SOKOLOV, V. S; DYUKOVA, T. V et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1983, Vol 11, Num 4-6, pp 327-346, issn 0022-0728Article

PHOTOGALVANIC EFFECTS INVESTIGATION IN GALLIUM ARSENIDEALPEROVICH VL; BELINICHER VI; NOVIKOV VN et al.1982; FERROELECTRICS; ISSN 0015-0193; USA; DA. 1982; VOL. 45; NO 1-2; PP. 1-12; BIBL. 29 REF.Article

EFFET PHOTOELECTRIQUE DANS LES MAGNETO-DIODESDAUDERIS VA; STRUOGYUS YU LS.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 7; PP. 1563-1564; BIBL. 1 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

EFFET PHOTO-ELECTRIQUE DANS LES CELLULES SANDWICHES MULTICOUCHES RENFERMANT DE LA PHTALOCYANINEILATOVSKIJ VA; DMITRIEV IB; KOMISSAROV GG et al.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1219-1222; BIBL. 4 REF.Article

MISE EN EVIDENCE D'UNE INSTABILITE DE L'EFFET PHOTOELECTRIQUE DANS DES STRUCTURES MULTIJONCTIONS MATRICIELLES BASEES SUR DU SILICIUMAGAEV YA; BAZAROV BA; ZADDEH VV et al.1978; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; SUN; DA. 1978; NO 2; PP. 19-23; ABS. ENG; BIBL. 7 REF.Article

CURRENT PHOTORESPONSE OF AN ELECTROLYTE-ZINC SELENIDE JUNCTIONLEMASSON P; GAUTRON J.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 303-309; ABS. FRE; BIBL. 16 REF.Article

DISTRIBUTION SPECTRALE DE LA PHOTOSENSIBILITE DU CARBURE DE SILICIUM CUBIQUE DANS LA REGION INTRINSEQUEALTAISKIJ YU M; RODIONOV VN; STOYANOVA PI et al.1976; C.R. ACAD. BULG. SCI.; BULG.; DA. 1976; VOL. 29; NO 12; PP. 1755-1756; BIBL. 7 REF.Article

Minority-carrier properties of 1.93-eV Al_0.37Ga_0.63As grown by MOCVDAHRENKIEL, R. K; GREENBERG, D; DUNLAVY, D. J et al.Photovoltaic specialists conference. 19. 1987, pp 1180-1186Conference Paper

Resonant magneto-optical transitions from a deep level in PbTeNIEWODNICZANSKA-ZAWADZKA, J; LISCHKA, K.Solid state communications. 1984, Vol 50, Num 8, pp 721-723, issn 0038-1098Article

Phonon-electron coupling as a possible transducing mechanism in bioelectronic processes involving neuromelaninLACY, M. E.Journal of theoretical biology. 1984, Vol 111, Num 1, pp 201-204, issn 0022-5193Article